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BBY52 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
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BBY52...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 6 V
VR = 6 V, TA = 85 °C
IR
nA
-
-
10
-
- 200
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance
VR = 1 V, f = 1 GHz
CT
CT1 /CT4
1.4
0.95
0.9
0.85
1.1
1.85
1.5
1.35
1.15
1.6
pF
2.2
2
1.75
1.45
2.1
rS
-
0.9 1.7 
2
Oct-24-2002
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