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BBY51_07 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Silicon Tuning Diode
BBY51...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 6 V
VR = 6 V, TA = 85 °C
IR
nA
-
-
10
-
- 200
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
CT
pF
5.05 5.4 5.75
3.4 4.2 5.2
2.7 3.5 4.6
2.5 3.1 3.7
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Capacitance difference
VR = 1 V, VR = 3 V, f = 1 MHZ
Capacitance difference
VR = 3 V, VR = 4 V, f = 1 MHZ
Series resistance
VR = 1 V, f = 1 GHz
CT1/CT4 1.55 1.75 2.2
C1V-C3V
1.4 1.78 2.2 pF
C3V-C4V
0.3
0.5 0.7
rS
- 0.37 - Ω
2
2007-04-20