BB844 Datasheet, PDF (2/3 Pages) Infineon Technologies AG – Silicon Variable Capacitance Diode

BB844
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
V_R = 16 V
V_R = 16 V, T_A = 85 °C
I_R
-
-
nA
-
-
20
200
AC Characteristics
Diode capacitance
V_R = 2 V, f = 1 MHz
V_R = 4 V, f = 1 MHz
V_R = 8 V, f = 1 MHz
Capacitance ratio
V_R = 2 V, V_R = 8 V, f = 1 MHz
Capacitance matching¹⁾
V_R = 2V to 8V , f = 1 MHz
Series resistance
V_R = 2 V, f = 100 MHz
C_T
pF
42.5 43.75 45
25
27
29
10 11.5 13
C_T2/C_T8 3.2 3.8
-

C_T/C_T
-
-
1.5 %
r_S
- 0.28 - 
1_{For details please refer to Application Note 047.}
2
Nov-07-2002