BB831_07 Datasheet, PDF (2/5 Pages) Infineon Technologies AG – Silicon Variable Capacitance Diodes

BB831...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
V_R = 30 V
V_R = 30 V, T_A = 85 °C
I_R
nA
-
-
20
-
- 500
AC Characteristics
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 28 V, f = 1 MHz
Capacitance ratio
V_R = 1 V, V_R = 28 V, f = 1 MHz
Capacitance matching¹⁾
V_R = 1 V, V_R = 28 V, f = 1 MHz
Series resistance
V_R = 1 V, f = 100 MHz
1_{For details please refer to Application Note 047.}
C_T
C_T1/C_T28
7.8 8.8
0.85 1.02
7.8 8.6
pF
9.8
1.2
9.5
∆C_T/C_T
-
-
3%
r_S
-
1
-Ω
2
2007-04-20