BB831 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units)

BB831...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
V_R = 30 V
V_R = 30 V, T_A = 85 °C
I_R
nA
-
-
20
-
- 500
AC Characteristics
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 28 V, f = 1 MHz
Capacitance ratio
V_R = 1 V, V_R = 28 V, f = 1 MHz
Capacitance matching¹⁾
V_R = 1 V, V_R = 28 V, f = 1 MHz
Series resistance
V_R = 1 V, f = 100 MHz
C_T
C_T1/C_T28
7.8
0.85
7.8
8.8
1.02
8.6
pF
9.8
1.2
9.5

C_T/C_T
-
-
3%
r_S
-
1
-
1_{For details please refer to Application Note 047.}
2
Nov-07-2002