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BB669 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance)
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BB669
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 30 V
IR
-
-
10 nA
Reverse current
VR = 30 V, TA = 85 °C
IR
-
-
200
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
CT
51
39.6
2.6
2.5
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
CT2/CT25
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
CT1/CT28
Capacitance ratio 1)
VR = 1 V, VR = 28 V, f = 1 MHz
CT /CT
Series resistance
rs
VR = 8 V, f = 470 MHz
Series inductance
Ls
1) In-line matching. For details please refer to Application Note 047
14.5
18
-
-
-
56.5
43.4
2.8
2.7
15.5
20.9
-
0.85
1.8
pF
61.5
47.2
3
2.9
17 -
23.3
2%
-
- nH
2
Jul-05-2001
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