BB639C Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners)

BB639C/BB659C...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
V_R = 30 V
V_R = 30 V, T_A = 85 °C
I_R
nA
-
-
10
-
- 200
AC Characteristics
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 2 V, f = 1 MHz
V_R = 25 V, f = 1 MHz
V_R = 28 V, f = 1 MHz
Capacitance ratio
V_R = 1 V, V_R = 28 V, f = 1 MHz
Capacitance ratio
V_R = 2 V, V_R = 25 V, f = 1 MHz
Capacitance matching¹⁾
V_R = 1V to 28V, f = 1 MHz, 7 diodes sequence,
BB639C
V_R = 1V to 28V , f = 1 MHz, 4 diodes sequence,
BB659C/-02V
V_R = 1V to 28V, f = 1 MHz, 7 diodes sequence ,
BB659C/-02V
C_T
C_T1/C_T28
C_T2/C_T25

C_T/C_T
36.5
27
2.5
2.4
14.2
9.5
-
-
-
39
30.2
2.72
2.55
15.3
11.1
-
0.3
0.5
pF
42
33.2
3.05
2.75
-
-
%
2.5
1
2
Series resistance
r_S
V_R = 5 V, f = 470 MHz
1_{For details please refer to Application Note 047}
-
0.6 0.7 
2
Nov-07-2002