BB535E7904 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Silicon Tuning Diode

BB535/BB555...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
V_R = 30 V
V_R = 30 V, T_A = 85 °C
I_R
nA
-
-
10
-
- 200
AC Characteristics
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 2 V, f = 1 MHz
V_R = 25 V, f = 1 MHz
V_R = 28 V, f = 1 MHz
C_T
pF
17.5 18.7 20
14.01 15 16.1
2.05 2.24 2.4
1.9 2.1 2.3
Capacitance ratio
C_T1/C_T28 ^{8.2 8.9 9.8} -
V_R = 1 V, V_R = 28 V, f = 1 MHz
Capacitance ratio
C_T2/C_T25
6 6.7 7.5
V_R = 2 V, V_R = 25 V, f = 1 MHz
Capacitance matching¹⁾
∆C_T/C_T
%
V_R = 1V to 28V, f = 1 MHz, 7 diodes sequence,
BB535
-
-
2.5
V_R = 1V to 28V, f = 1 MHz, 4 diodes sequence,
BB555/-02V
- 0.15 1
V_R = 1V to 28V, f = 1 MHz, 7 diodes sequence,
BB555/-02V
- 0.25 2
Series resistance
r_S
V_R = 3 V, f = 470 MHz
Series inductance
L_S
1_{For details please refer to Application Note 047}
- 0.58 0.75 Ω
-
0.6
- nH
2
2011-06-15