BB535 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio, low series resistance)

BB535 /BB555...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
V_R = 30 V
V_R = 30 V, T_A = 85 °C
I_R
nA
-
-
10
-
- 200
Electrical Characteristics
Parameter
AC Characteristics
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 2 V, f = 1 MHz
V_R = 25 V, f = 1 MHz
V_R = 28 V, f = 1 MHz
Capacitance ratio
V_R = 1 V, V_R = 28 V, f = 1 MHz
Capacitance ratio
V_R = 2 V, V_R = 25 V, f = 1 MHz
Capacitance matching¹⁾
V_R = 1V to 28V, f = 1 MHz, 7 diodes sequence,
BB535
V_R = 1V to 28V, f = 1 MHz, 4 diodes sequence,
BB555/-02V
V_R = 1V to 28V, f = 1 MHz, 7 diodes sequence,
BB555/-02V
Symbol
Values
Unit
min. typ. max.
C_T
17.5
14.01
2.05
1.9
C_T1/C_T28 8.2
18.7
15
2.24
2.1
8.9
pF
20
16.1
2.4
2.3
9.8 -
C_T2/C_T25 6
6.7 7.5

C_T/C_T
%
-
-
2.5
- 0.15 1
- 0.25 2
Series resistance
V_R = 3 V, f = 470 MHz
r_S
- 0.58 0.75 
1_{For details please refer to Application Note 047}
2
Nov-07-2002