BB439_07 Datasheet, PDF (2/5 Pages) Infineon Technologies AG – Silicon Variable Capacitance Diode

BB439...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
V_R = 28 V
V_R = 28 V, T_A = 85 °C
I_R
-
-
20
-
- 200
AC Characteristics
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 2 V, f = 1 MHz
V_R = 3 V, f = 1 MHz
V_R = 25 V, f = 1 MHz
C_T
-
43
-
31.5 34.5 37.5
26.5 29 31.5
4.3 5.1 6
Capacitance ratio
V_R = 2 V, V_R = 25 V, f = 1 MHz
Capacitance ratio
V_R = 3 V, V_R = 25 V, f = 1 MHz
Capacitance matching¹⁾
V_R = 3 V, V_R = 25 V, f = 1 MHz
Series resistance
V_R = 10 V, f = 100 MHz
Figure of merit
C_T2/C_T25
C_T3/C_T25
∆C_T/C_T
r_S
Q
6
6.9
8
5 5.8 6.5
-
-
3
- 0.35 0.5
V_R = 3 V, f = 50 MHz
V_R = 25 V, f = 200 MHz
- 280 -
- 600 -
1_{For details please refer to Application Note 047.}
Unit
nA
pF
%
Ω
2
2007-04-20