BB439 Datasheet, PDF(2/3 Page) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For VHF tuned circuit applications High figure of merit)

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BB439 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For VHF tuned circuit applications High figure of merit)

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BB439...

Electrical Characteristics at TA = 25Â°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Reverse current

VR = 28 V

VR = 28 V, TA = 85 Â°C

- 200

AC Characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 2 V, f = 1 MHz

VR = 3 V, f = 1 MHz

VR = 25 V, f = 1 MHz

Capacitance ratio

VR = 2 V, VR = 25 V, f = 1 MHz

Capacitance ratio

VR = 3 V, VR = 25 V, f = 1 MHz

Capacitance matching1)

VR = 3 V, VR = 25 V, f = 1 MHz

Series resistance

VR = 10 V, f = 100 MHz

Figure of merit

VR = 3 V, f = 50 MHz

VR = 25 V, f = 200 MHz

31.5

26.5

4.3

CT2/CT25 6

34.5

5.1

6.9

37.5

31.5

CT3/CT25 5

5.8 6.5

CT/CT

- 0.35 0.5

280

600

1For details please refer to Application Note 047.

Jul-09-2003

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