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BAT18 Datasheet, PDF (2/3 Pages) NXP Semiconductors – Band-switching diode | |||
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BAT18...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 20 V
VR = 20 V, TA = 60 °C
Forward voltage
IF = 100 mA
IR
nA
-
-
20
-
- 200
VF
- 0.92 1.2 V
AC Characteristics
Diode capacitance
CT
VR = 20 V, f = 1 MHz
Forward resistance
rf
IF = 5 mA, f = 100 MHz
Charge carrier life time
rr
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA ,
RL = 100
I-region width
WI
- 0.75 1 pF
-
0.4 0.7
-
120
- ns
-
3
- µm
2
Jan-07-2003
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