BAT15-03W Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)

BAT 15-03W
Electrical Characteristics at T_A = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics (per diode)
Breakdown voltage
I_(BR) = 5 µA
V_(BR)
4
-
-V
Forward voltage
I_F = 1 mA
I_F = 10 mA
V_F
- 0.23 0.32
- 0.32 0.41
AC characteristics (per diode)
Diode capacitance
V_R = 1 V, f = 1 MHz
Forward resistance
IF = 10mA / 50mA
C_T
-
- 0.35 pF
R_F
-
-
5.5 Ω
2
Oct-07-1999