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BAS70_11 Datasheet, PDF (2/3 Pages) Infineon Technologies AG – HiRel Silicon Schottky Diode | |||
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Maximum Ratings
Parameter
Reverse Voltage
Forward Current
Surge Forward Current 1)
Power Dissipation 2)
Operating Temperature Range
Storage Temperature Range
Soldering Temperature 3)
Junction Temperature
Thermal Resistance Junction-Case
Symbol
VR
IF
IFSM
Ptot
Top
Tstg
Tsol
Tj
Rth(j-c)
BAS70
Values
Unit
70
V
70
mA
85
mA
250
mW
-55 to +150
°C
-55 to +150
°C
+250
°C
150
°C
100
K/W
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ.
max.
DC Characteristics
Reverse Current 1, VR=70V
IR1
-
-
2
µA
Reverse Current 2, VR=56V
Forward Voltage 1, IF1=1mA
Forward Voltage 2, IF2=10mA
Forward Voltage 3, IF3=15mA
Differential Forward Resistance 4)
IF2=10mA, IF3=15mA
IR2
-
-
0,1 µA
VF1
0,30 0,38
0,44 V
VF2
0,60 0,70
0,78 V
VF3
0,80 0,85
1,00 V
RFD
24
30
32 ï
AC Characteristics
Total Capacitance
CT
1,2 1,5
2
pF
VR=0V; f=1MHz
Notes.:
1.) t ï£ 10ms, Duty Cycle=10%
2.) At TCASE = 125 °C. For TCASE > 125 °C derating is required.
3.) During 5 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.
ïVF
4.)
RFD=----------------
5x10-3 A
IFAG IMM RPD D HIR
2 of 3
V2, Februar 2011
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