BAS70 Datasheet, PDF (2/4 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70
Maximum Ratings
Parameter
Reverse Voltage
Forward Current
Surge Forward Current ¹⁾
Power Dissipation ²⁾
Operating Temperature Range
Storage Temperature Range
Soldering Temperature ³⁾
Junction Temperature
Thermal Resistance Junction-Case
Symbol
V_R
I_F
I_FSM
P_tot
T_op
T_stg
T_sol
T_j
R_th(j-c)
Values
Unit
70
V
70
mA
85
mA
250
mW
-55 to +150
°C
-55 to +150
°C
+250
°C
150
°C
100
K/W
Electrical Characteristics
at T_A=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ.
max.
DC Characteristics
Reverse Current 1
V_R=70V
Reverse Current 2
V_R=56V
Forward Voltage 1
I_F1=1mA
Forward Voltage 2
I_F2=10mA
Forward Voltage 3
I_F3=15mA
Differential Forward Resistance ⁴⁾
IF2=10mA, IF3=15mA
I_R1
-
-
2
µA
I_R2
-
-
0,1 µA
V_F1
0,30 0,38
0,44 V
V_F2
0,60 0,70
0,78 V
V_F3
0,80 0,85
1,00 V
R_FD
24
30
32 Ω
AC Characteristics
Total Capacitance
C_T
1,2 1,5
2
pF
V_R=0V; f=1MHz
Notes.:
1.) t ≤ 10ms, Duty Cycle=10%
2.) At T_CASE = 125 °C. For T_CASE > 125 °C derating is required.
3.) During 5 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.
∆VF
4.)
RFD=----------------
5x10-3 A
Semiconductor Group
2 of 4
Draft B, September 99