BAS40_11 Datasheet, PDF (2/3 Pages) Infineon Technologies AG – HiRel Silicon Schottky Diode

Maximum Ratings
Parameter
Reverse Voltage
Forward Current
Surge Forward Current ¹⁾
Power Dissipation ²⁾
Operating Temperature Range
Storage Temperature Range
Soldering Temperature ³⁾
Junction Temperature
Thermal Resistance Junction-Case
Symbol
V_R
I_F
I_FSM
P_tot
T_op
T_stg
T_sol
T_j
R_th(j-c)
Values
40
120
170
250
-55 to +150
-55 to +150
+250
150
100
BAS40
Unit
V
mA
mA
mW
°C
°C
°C
°C
K/W
Electrical Characteristics
at T_A=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ.
max.
DC Characteristics
Reverse Current 1, V_R=40V
Reverse Current 2, V_R=30V
Forward Voltage 1, I_F1=1mA
Forward Voltage 2, I_F2=10mA
Forward Voltage 3, I_F3=40mA
Differential Forward Resistance ⁴⁾
IF=10mA, IF=15mA
I_R1
-
-
10 µA
I_R2
-
-
1
µA
V_F1
0,29 0,33
0,39 V
V_F2
0,42 0,45
0,54 V
V_F3
0,68 0,7
0,85 V
R_FD
7,5
10
11,5 
AC Characteristics
Total Capacitance
C_T
2,2 2,9
5,0 pF
V_R=0V; f=1MHz
Notes.:
1.) t  10ms, Duty Cycle=10%
2.) At T_CASE = 125 °C. For T_CASE > 125 °C derating is required.
3.) During 5 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.
VF
4.)
RFD=----------------
5x10-3 A
IFAG IMM RPD D HIR
2 of 3
V2, February 2011