BAS3007A Datasheet, PDF (2/6 Pages) Infineon Technologies AG – Low VF Schottky Diode Array

BAS3007A...
Thermal Resistance
Parameter
Junction - soldering point¹⁾
Symbol
R_thJS
Value
Unit
≤ 95
K/W
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current (per diode)²⁾
I_R
V_R = 12 V
-
-
30
V_R = 30 V
-
- 350
Forward voltage (per diode)²⁾³⁾
V_F
I_F = 100 mA
- 0.35 0.4
I_F = 350 mA
-
0.4 0.5
I_F = 500 mA
- 0.45 0.55
I_F = 700 mA
-
0.5 0.6
I_F = 900 mA
-
0.6 0.7
Unit
µA
V
AC Characteristics
Diode capacitance (per diode)
C_T
-
9
15 pF
V_R = 5 V, f = 1 MHz
1_{For calculation of RthJA please refer to Application Note Thermal Resistance}
2_{Pulsed test, tp = 300 µs; D = 0.01}
3_{When used as shown for Reverse Polarity Protection (RPP, see page 4), the voltage available to the circuit}
being protected will be two diode drops below the power supply voltage. In other words, the supply current
will pass through two diodes.
2
2007-11-20