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BAR66 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – Silicon PIN Diode Array (Surge protection device Two PIN diodes, series configuration)
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BAR66...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 5 µA
Reverse current
VR = 100 V
Forward voltage
IF = 50 mA
V(BR)
IR
VF
150 -
-V
-
-
20 nA
- 0.95 1.2 V
AC Characteristics
Diode capacitance
CT
VR = 35 V, f = 1 MHz
VR = 0 V, f = 100 MHz
Zero bias conductance
gP
VR = 0 V, f = 100 MHz
Forward resistance
rf
IF = 5 mA, f = 100 MHz
Charge carrier life time
 rr
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 
pF
-
0.4 0.6
- 0.35 0.9
-
220
- µs
-
1.5 1.8 
-
0.7
- µs
2
Feb-04-2003
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