AUIRLL2705 Datasheet, PDF(2/10 Page) International Rectifier

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AUIRLL2705 Datasheet, PDF (2/10 Pages) International Rectifier – Advanced Planar Technology

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AUIRLL2705

Static @ TJ = 25Â°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

ïV(BR)DSS/ïTJ

RDS(on)

VGS(th)

gfs

IDSS

IGSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Trans conductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

55 âââ âââ V VGS = 0V, ID = 250ÂµA

âââ 0.061 âââ V/Â°C Reference to 25Â°C, ID = 1mA

âââ âââ 0.040

VGS = 10V, ID = 3.8A ïï

âââ âââ 0.051 ïï ï ï ï VGS = 5.0V, ID = 3.8A ïï

âââ âââ 0.065

VGS = 4.0V, ID = 1.9A ïï

1.0 âââ 2.0 V VDS = VGS, ID = 250ÂµA

5.1 âââ âââ S VDS = 25V, ID = 1.9A

âââ

250

ÂµA

VDS = 55V, VGS = 0V

VDS = 44V,VGS = 0V,TJ = 150Â°C

âââ

âââ 100

âââ -100

VGS = 16V

VGS = -16V

Dynamic Electrical Characteristics @ TJ = 25Â°C (unless otherwise specified)

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain Charge

td(on)

Turn-On Delay Time

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Diode Characteristics

âââ 32 48

ID = 3.8A

âââ 3.5 5.3 nC VDS = 44V

âââ 9.7 14

VGS = 10V, See Fig 6 and 9 ï

âââ 6.2 âââ

VDD = 28V

âââ

ID = 3.8A

RG = 6.2ïï

âââ 22 âââ

RD = 7.1ïï¬ï See Fig. 10 ïï

âââ 870 âââ

VGS = 0V

âââ 220 âââ pF VDS = 25V

âââ 92 âââ

Æ = 1.0MHz, See Fig.5

Parameter

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)ï ïï

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

âââ âââ 0.91

âââ âââ 30

MOSFET symbol

showing the

integral reverse

p-n junction diode.

âââ âââ 1.3 V TJ = 25Â°C,IS = 3.8A,VGS = 0V ïï

âââ 58 88 ns TJ = 25Â°C ,IF = 3.8A

âââ 140 210 nC di/dt = 100A/Âµs ïï ï

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:ï

ï Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)

ï VDD = 25V, Starting TJ = 25Â°C, L = 15mH, RG = 25ï, IAS = 3.8A. (See fig. 12)

ïï ISD ï£ï 3.8A, di/dt ï£ï 220A/Âµs, VDD ï£ï V(BR)DSS, TJ ï£ 150Â°C.

ï Pulse width ï£ï 300Âµs; duty cycle ï£ 2%.

ï When mounted on FR-4 board using minimum recommended footprint.

ïï When mounted on 1 inch square copper board, for comparison with other SMD devices.

2015-10-29

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