AUIRFS4310 Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET

AUIRFS/SL4310
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
100 ––– ––– V V_GS = 0V, I_D = 250µA
V_(BR)DSS/T_J Breakdown Voltage Temp. Coefficient
––– 0.064 ––– V/°C Reference to 25°C, I_D = 1mA 
R_DS(on)
Static Drain-to-Source On-Resistance
––– 5.6 7.0 m V_GS = 10V, I_D = 75A 
V_GS(th)
gfs
R_G
I_DSS
I_GSS
Gate Threshold Voltage
Forward Trans conductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
160 ––– ––– S V_DS = 50V, I_D = 75A
––– 1.4 –––  ƒ = 1.0MHz, open drain
–––
–––
–––
–––
20
250
µA
V_DS = 100V, V_GS = 0V
V_DS = 100V,V_GS = 0V,T_J =125°C
–––
–––
––– 100
––– -100
nA
V_GS = 20V
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain Charge
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
C_iss
Input Capacitance
C_oss
Output Capacitance
––– 170 250
––– 46 –––
––– 62 –––
––– 26 –––
––– 110 –––
––– 68 –––
––– 78 –––
––– 7670 –––
––– 540 –––
C_rss
Reverse Transfer Capacitance
––– 280 –––
C_{oss eff.(ER)}
Effective Output Capacitance (Energy Related) ––– 650 –––
C_{oss eff.(TR)}
Effective Output Capacitance (Time Related)
––– 720.1 –––
Diode Characteristics
I_D = 75A
nC V_DS = 80V
V_GS = 10V
V_DD = 65V
ns
I_D = 75A
R_G= 2.6
V_GS = 10V
V_GS = 0V
V_DS = 50V
pF ^{ƒ = 1.0MHz, See Fig. 5}
V_GS = 0V, V_DS = 0V to 80V
V_GS = 0V, V_DS = 0V to 80V
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
–––
–––
––– 130
––– 550
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
––– ––– 1.3
––– 45 68
––– 55 83
V T_J = 25°C,I_S = 75A,V_GS = 0V 
ns
T_J = 25°C
T_J = 125°C
V_DD = 85V
I_F = 75A,
–––
–––
82
120
120
180
nC
T_J = 25°C
T_J = 125°C
di/dt = 100A/µs 
––– 3.3 ––– A T_J = 25°C 
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 75A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
 Repetitive rating; pulse width limited by max. junction temperature.
 Limited by T_Jmax, starting T_J = 25°C, L = 0.35mH, R_G = 25, I_AS = 75A, V_GS =10V. Part not recommended for use above this value.
 I_SD 75A, di/dt 550A/µs, V_DD V_(BR)DSS, T_J  175°C.
 Pulse width 400µs; duty cycle  2%.
 C_oss eff. (TR) is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 80% V_DSS.
 C_oss eff. (ER) is a fixed capacitance that gives the same energy as C_oss while V_DS is rising from 0 to 80% V_DSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
 R_ is measured at T_J approximately 90°C.
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2015-10-27