AUIRFR5505 Datasheet, PDF(2/11 Page) International Rectifier

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AUIRFR5505 Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET® Power MOSFET

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AUIRFR/U5505

Static @ TJ = 25Â°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

ïV(BR)DSS/ïTJ

RDS(on)

VGS(th)

gfs

IDSS

IGSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Trans conductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

-55 âââ âââ V VGS = 0V, ID = -250ÂµA

âââ -0.049 âââ V/Â°C Reference to 25Â°C, ID = -1mA

âââ âââ 0.11 ïï ï VGS = -10V, ID = -9.6A ï

-2.0 âââ -4.0 V VDS = VGS, ID = -250ÂµA

4.2 âââ âââ S VDS = -25V, ID = -9.6A ï

âââ

âââ -25

âââ -250

ÂµA

VDS = -55 V, VGS = 0V

VDS = -44V,VGS = 0V,TJ =150Â°C

âââ

âââ -100

âââ 100

VGS = -20V

VGS = 20V

Dynamic Electrical Characteristics @ TJ = 25Â°C (unless otherwise specified)

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain Charge

td(on)

Turn-On Delay Time

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Diode Characteristics

âââ âââ 32

ID = -9.6A

âââ âââ 7.1 nC VDS = -44V

âââ âââ 15

VGS = -10V, See Fig 6 and 13 ï

âââ 12 âââ

VDD = -28V

âââ

ID = -9.6A

RG = 2.6ïï

âââ 16 âââ

RD = 2.8ïï¬ï See Fig 10 ï

âââ

4.5

7.5

âââ

Between lead,

6mm (0.25in.)

from package

and center of die contact

âââ 650 âââ

VGS = 0V

âââ 270 âââ pF VDS = -25V

âââ 120 âââ

Æ = 1.0MHz, See Fig. 5

Parameter

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)ï ïï

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min.

âââ

Typ.

âââ

110

Max. Units

Conditions

-18

-64

MOSFET symbol

showing the

integral reverse

p-n junction diode.

-1.6 V TJ = 25Â°C,IS = -9.6A,VGS = 0V ïï

77 ns TJ = 25Â°C ,IF = -9.6A

160 nC di/dt = 100A/Âµs ïï

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:ï

ï Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)

ï VDD = -25V, starting TJ = 25Â°C, L = 2.8mH, RG = 25ï, IAS = -6.6A. (See Fig.12)

ï ISD ï£ï -6.6A, di/dt ï£ï -240A/Âµs, VDD ï£ï V(BR)DSS, TJ ï£ 150Â°C.

ï Pulse width ï£ï 300Âµs; duty cycle ï£ 2%.

ïï This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact .ï

ïï Uses IRF9Z24N data and test conditions.ï

ï When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to

application note #AN-994

2015-10-12

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