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| AUIRFR3504 Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET? Power MOSFET | |||
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AUIRFR3504
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ïV(BR)DSS/ïTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
40 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.041 âââ V/°C Reference to 25°C, ID = 1mA
âââ 7.8 9.2 mïï ï VGS = 10V, ID = 30A ï**ï
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
40 âââ âââ S VDS = 10V, ID = 30A ï**
âââ
âââ
âââ
âââ
20
250
µA
VDS = 40V, VGS = 0V
VDS = 40V,VGS = 0V,TJ =125°C
âââ
âââ
âââ 200
âââ -200
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
âââ 48 71
âââ 12 18
âââ 13 20
âââ 11 âââ
âââ 53 âââ
âââ 36 âââ
âââ 22 âââ
âââ 4.5 âââ
âââ 7.5 âââ
âââ 2150 âââ
âââ 580 âââ
âââ 46 âââ
âââ 2830 âââ
âââ 510 âââ
âââ 870 âââ
ID = 30A**
nC VDS = 32V
VGS = 10Vï
VDD = 20V
ns
ID = 30A**
RG = 6.8ïï
VGS = 10Vï
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
pF
Æ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 1.0V Æ = 1.0MHz
VGS = 0V, VDS = 32V Æ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)ï ïï
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 87ï
âââ âââ 350
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
âââ âââ 1.3 V TJ = 25°C,IS = 30A**,VGS = 0V ïï
âââ 53 80 ns TJ = 25°C ,IF = 30A**, VDD = 20V
âââ 86 130 nC di/dt = 100A/µsï
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:ï
ï Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
ï Limited by TJmax , starting TJ = 25°C, L = 0.52mH, RG = 25ï, IAS = 30A, VGS =10V. Part not recommended for use above this value.
ï ISD ï£ï 30A, di/dt ï£ï 170A/µs, VDD ï£ï V(BR)DSS, TJ ï£ 175°C.
ï Pulse width ï£ï 1.0ms; duty cycle ï£ 2%.
ï
ï Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
ïï Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
ïï This value determined from sample failure population. 100% tested to this value in production.
ïï Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 56A.
ï When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
ïï Rï± is measured at TJ approximately 90°C.
** All AC and DC test conditions based on former package limited current of 30A.
2
2015-11-23
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