AUIRFR120Z Datasheet, PDF(2/12 Page) International Rectifier

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AUIRFR120Z Datasheet, PDF (2/12 Pages) International Rectifier – AUTOMOTIVE MOSFET

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AUIRFR/U120Z

Static @ TJ = 25Â°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

ïV(BR)DSS/ïTJ

RDS(on)

VGS(th)

gfs

IDSS

IGSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Trans conductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

100 âââ âââ V VGS = 0V, ID = 250ÂµA

âââ 0.084 âââ V/Â°C Reference to 25Â°C, ID = 1mA

âââ 150 190 mïï ï VGS = 10V, ID = 5.2A ï

2.0 âââ 4.0 V VDS = VGS, ID = 250ÂµA

16 âââ âââ S VDS = 25V, ID = 5.2A

âââ

250

ÂµA

VDS = 100 V, VGS = 0V

VDS = 100V,VGS = 0V,TJ =125Â°C

âââ

âââ 200

âââ -200

VGS = 20V

VGS = -20V

Dynamic Electrical Characteristics @ TJ = 25Â°C (unless otherwise specified)

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain Charge

td(on)

Turn-On Delay Time

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Coss

Output Capacitance

Coss

Output Capacitance

Coss eff.

Effective Output Capacitance

Diode Characteristics

âââ 6.9 10

ID = 5.2A

âââ 1.6 âââ nC VDS = 80V

âââ 3.1 âââ

VGS = 10Vï

âââ 8.3 âââ

VDD = 50V

âââ

ID = 5.2A

RG = 53ïï

âââ 23 âââ

VGS = 10Vï

âââ

4.5

7.5

âââ

Between lead,

6mm (0.25in.)

from package

and center of die contact

âââ 310 âââ

VGS = 0V

âââ 41 âââ

VDS = 25V

âââ

150

âââ

Æ = 1.0MHz

VGS = 0V, VDS = 1.0V Æ = 1.0MHz

âââ 26 âââ

VGS = 0V, VDS = 80V Æ = 1.0MHz

âââ 57 âââ

VGS = 0V, VDS = 0V to 80V ï

Parameter

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)ï ïï

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

âââ âââ 8.7

âââ âââ 35

MOSFET symbol

showing the

integral reverse

p-n junction diode.

âââ âââ 1.3

âââ 24 36

âââ 23 35

V TJ = 25Â°C,IS = 5.2A,VGS = 0V ïï

ns TJ = 25Â°C ,IF = 5.2A, VDD = 50V

nC di/dt = 100A/Âµsï

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:ï

ï Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)

ï Limited by TJmax , starting TJ = 25Â°C, L = 1.29mH, RG = 25ï, IAS = 5.2A, VGS =10V. Part not recommended for use above this value.

ï Pulse width ï£ï 1.0ms; duty cycle ï£ 2%.

ïï Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS

ïï Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.

ïï This value determined from sample failure population. 100% tested to this value in production.

ï When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to

application note #AN-994

2015-10-12

▷