 English |
|
|
|
|
|
|
|
| AUIRFP2602 Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET® Power MOSFET | |||
| |||
| ◁ |
AUIRFP2602
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
24 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.02 âââ V/°C Reference to 25°C, ID = 1mA
âââ 1.25 1.6 m⦠VGS = 10V, ID = 180A
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
230 âââ âââ S VDS = 10V, ID = 180A
âââ
âââ
âââ
âââ
20
250
µA
VDS =24 V, VGS = 0V
VDS =24V,VGS = 0V,TJ =125°C
âââ
âââ
âââ 200
âââ -200
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 260 390
âââ 72 âââ
âââ 100 âââ
âââ 70 âââ
âââ 490 âââ
âââ 150 âââ
âââ 270 âââ
âââ 5.0 âââ
âââ 13 âââ
âââ 11220 âââ
âââ 4800 âââ
âââ 2660 âââ
âââ 13020 âââ
4800
âââ 6710 âââ
ID = 180A
nC VDS = 12V
VGS = 10V
VDD = 12V
ns
ID = 180A
RG= 2.5â¦
VGS = 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
pF VDS = 19V
Æ = 1.0KHz
VGS=0V, VDS=1.0V ,Æ = 1.0KHz
VGS=0V, VDS=19V ,Æ = 1.0KHz
VGS = 0V, VDS = 0V to 19V
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Min.
âââ
âââ
Typ. Max. Units
Conditions
âââ 380
âââ 1580
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
âââ âââ 1.3 V TJ = 25°C,IS = 180A,VGS = 0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ 55 83 ns TJ = 25°C ,IF = 180A, VDD =12V
âââ 56 84 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
Limited by TJmax, starting TJ = 25°C, L = 0.025mH, RG = 25â¦, IAS = 180A, VGS =10V. Part not recommended for use above this value.
Pulse width ⤠1.0ms; duty cycle ⤠2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
Rθ is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 180A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
2
2016-2-16
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese