AUIRF7309Q Datasheet, PDF(2/12 Page) International Rectifier – Advanced Planar Technology Low On-Resistance

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AUIRF7309Q Datasheet, PDF (2/12 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

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AUIRF7309Q

Static @ TJ = 25Â°C (unless otherwise specified)

Parameter

V(BR)DSS

Drain-to-Source Breakdown Voltage

ïV(BR)DSS/ïTJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

gfs

Gate Threshold Voltage

Forward Trans conductance

IDSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

IGSS

Gate-to-Source Reverse Leakage

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-P

Min.

-30

âââ

1.0

-1.0

5.2

2.5

âââ

Typ.

âââ

0.032

-0.037

âââ

Max.

âââ

0.050

0.080

0.10

0.16

3.0

-3.0

âââ

1.0

-1.0

-25

Â± 100

Units

Conditions

VGS = 0V, ID = 250ÂµA

VGS = 0V, ID = -250ÂµA

V/Â°C

Reference to 25Â°C, ID = 1mA

Reference to 25Â°C, ID = -1mA

VGS = 10V, ID = 2.4A ïï

ïï ï ï

VGS = 4.5V, ID = 2.0A ïï

VGS = -10V, ID = -1.8A ïï

VGS = -4.5V, ID = -1.5A ïï

VDS = VGS, ID = 250ÂµA

VDS = VGS, ID = -250ÂµA

VDS = 15V, ID = 2.4A

VDS = -24V, ID = -1.8A

VDS =24V, VGS = 0V

ÂµA

VDS = -24V,VGS = 0V

VDS =24V, VGS = 0V ,TJ =125Â°C

VDS = -24V,VGS = 0V,TJ =125Â°C

VGS = Â± 20V

Dynamic Electrical Characteristics @ TJ = 25Â°C (unless otherwise specified)

Total Gate Charge

Qgs

Gate-to-Source Charge

N-Ch âââ âââ 25

N-Channel

P-Ch âââ âââ 25

ID = 2.6A, VDS = 16V,VGS = 4.5Vï

N-Ch âââ

P-Ch âââ

âââ

2.9

ï ï ï ï ï ï ï ï ï ï ï ï ï

P-Channel

Qgd

Gate-to-Drain Charge

N-Ch âââ âââ 7.9

P-Ch âââ âââ 9.0

ID = -2.2A,VDS = -16V,VGS = -4.5V

td(on)

Turn-On Delay Time

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

N-Ch âââ 6.8 âââ

N-Channel

P-Ch âââ 11 âââ

VDD = 10V,ID = 2.6A,RG = 6.0ïï¬ï

N-Ch âââ 21 âââ

RD = 3.8ïï

P-Ch âââ

N-Ch âââ

âââ

ns P-Channel

P-Ch âââ 25 âââ

N-Ch âââ 7.7 âââ

P-Ch âââ 18 âââ

VDD = -10V,ID = -2.2A,RG = 6.0ïï¬ï

RD = 4.5ïï

Internal Drain Inductance

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

N-P âââ 4.0 âââ

Between lead, 6mm(0.25n) from

N-P

âââ

6.0

âââ

nH package and center of die contact

N-Ch âââ 520 âââ

N-Channel

P-Ch âââ 440 âââ

VGS = 0V,VDS = 15V,Æ = 1.0MHz

N-Ch âââ

P-Ch âââ

180 âââ

200 âââ

ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï

P-Channel

N-Ch âââ 72 âââ

P-Ch

93 âââ

VGS = 0V,VDS = -15V,Æ = 1.0MHz

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

ISM

Continuous Source Current (Body Diode)

Pulsed Source Current

(Body Diode)ï ïï

N-Ch âââ âââ 1.8

P-Ch âââ âââ -1.8

N-Ch âââ âââ 16

P-Ch âââ âââ -12

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

N-Ch âââ

P-Ch âââ

N-Ch âââ

P-Ch âââ

âââ 1.0

âââ -1.0

47 71

53 80

TJ = 25Â°C,IS = 1.8A,VGS = 0V ïï

TJ = 25Â°C,IS = -1.8A,VGS = 0V ïï

N-Channel

TJ = 25Â°C ,IF = 2.6A, di/dt = 100A/Âµs ïï

Qrr

Reverse Recovery Charge

N-Ch âââ

P-Ch

P-Channel

TJ = 25Â°C,IF = -2.2A, di/dt = 100A/Âµs ï

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:ï

ï Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 23)

ïï N-Channel ISD ï£ï 2.4A, di/dt ï£ï 73A/Âµs, VDD ï£ï V(BR)DSS, TJ ï£ 150Â°C.

P-Channel ISD ï£ï -1.8A, di/dt ï£ï 90A/Âµs, VDD ï£ï V(BR)DSS, TJ ï£ 150Â°C

ï Pulse width ï£ï 300Âµs; duty cycle ï£ 2%.

ï When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to

application note #AN-994

2015-9-30

▷