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BTS6142D_07 Datasheet, PDF (19/30 Pages) Infineon Technologies AG – Smart High-Side Power Switch
Smart High-Side Power Switch
BTS 6142D
Protection Functions
IRbb
Rbb Vbb
-Vbb
Figure 14
RIN
IN
IS
-IIN
-IIS
D RIS
signal ground
Reverse battery protection
-IL
power ground
Reverse.emf
Additional power is dissipated by the integrated Rbb resistor. Use following formula for
estimation of overall power dissipation Pdiss(rev) in reverse polarity mode.
Pdiss(rev) ≈ RON(rev) ⋅ IL2 + Rbb ⋅ IR2 bb
For reverse battery voltages up to Vbb <16V the pin IN or the pin IS should be low ohmic
connected to signal ground. This can be achieved e.g. by using a small signal diode D
in parallel to the input switch or by using a small signal MOSFET driver. For reverse
battery voltages higher then Vbb >16V an additional resistor RIN is recommended. For
reverse battery voltages higher then Vbb >16 the overall current through Rbb should be
about 80mA.
----1----- + ----1---- = -------0----,-0----8---A----------
RIN RIS Vbb – 12V
Note: No protection mechanism is active during reverse polarity. The IC logic is not
functional.
Data Sheet
19
V1.1, 2007-02-28