BGA7M1N6 Datasheet, PDF (18/22 Pages) Infineon Technologies AG – Silicon Germanium Low Noise Amplifier for LTE

3.3
Application Circuit Schematic Band 3
BGA7M1N6
Application Information
RFIN
Band 3
C1
1nF
(optional)
L1
5.6nH
PON
N1 BGA7M1N6
GNDRF, 4
AO, 3
AI, 5
VCC, 2
PON, 6
GND, 1
RFOUT
Band 3
VCC
C2
1nF
(optional)
Figure 4 Application Schematic BGA7M1N6
BGA7M1N6_B3_Schematic.vsd
Table 12 Bill of Materials
Name
Part Type
Package
Manufacturer
C1 (optional) Chip capacitor
C2 (optional) ≥ 1nF²⁾
0402
0402
Various
Various
L1
Chip inductor
0402
Murata LQW type
N1
BGA7M1N6
TSNP-6-2
Infineon
1) DC block might be realized with pre-filter in LTE applications
2) For data sheet characteristics 1nF used
3) RF bypass recommended to mitigate power supply noise
Function
DC block ¹⁾
RF bypass ³⁾
Input matching
SiGe LNA
A list of all application notes is available at http://www.infineon.com/gpslna.appnotes.
Data Sheet
18
Revision 3.1 (Min/Max), 2014-02-11