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TLE4953 Datasheet, PDF (16/20 Pages) Infineon Technologies AG – Differential Two-Wire Hall Effect Sensor IC
TLE4953
TLE4953C
Electro Magnetic Compatibility (values depend on RM!)
Characterization of Electro Magnetic Compatibility are carried out on sample base of one
qualification lot. Not all specification parameters have been monitored during EMC
exposure. Only key parameters as e.g. switching current have been monitored
Parameter
Symbol
Level/Typ
Status
Ref. ISO 7637-1; test circuit 1;
∆B = 2 mT (amplitude of sinus signal); VCC = 13.5 V, fB = 100 Hz; T = 25 °C; RM ≥ 75 Ω
Testpulse 1
Testpulse 2
VEMC
IV / – 100 V
C1)
IV / 100 V
C1)
Testpulse 3a
IV / – 150 V
A
Testpulse 3b
IV / 100 V
A
Testpulse 4
IV / – 7 V
B2)
Testpulse 5
IV / 86.53) V
C
1) According to 7637-1 the supply switched "OFF" for t = 200 ms.
2) According to 7637-1 for test pulse 4 the test voltage shall be 12 V ± 0.2 V. Measured with RM =75Ω only.
Mainly the current consumption will decrease. Status C with test circuit 1.
3) Applying in the board net a suppressor diode with sufficient energy absorption capability.
Ref. ISO 7637-3; test circuit 1;
∆B = 2 mT (amplitude of sinus signal); VCC = 13.5 V, fB = 100 Hz; T = 25 °C; RM ≥ 75 Ω
Testpulse 1
Testpulse 2
VEMC
IV / – 30 V
A
IV / 30 V
A
Testpulse 3a
IV / – 60 V
A
Testpulse 3b
IV / 40 V
A
Ref. ISO 11452-3; test circuit 1; measured in TEM-cell
∆B = 2 mT; VCC = 13.5 V, fB = 100 Hz; T= 25 °C
EMC field strength ETEM-Cell
(TLE4953)
IV / 200 V/m
EMC field strength ETEM-Cell
(TLE4953C)
IV / 250 V/m
AM = 80%,
f = 1 kHz
AM = 80%,
f = 1 kHz
Data Sheet
13
V 4.0, 2010-04