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BTS50080-1TMB Datasheet, PDF (14/27 Pages) Infineon Technologies AG – Smart High-Side Power Switch
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Smart High-Side Power Switch
BTS50080-1TMB
Power Stages
Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
5.4.15 Turn-on delay after inverse
operation 2)
td(inv)
-
1
-
ms
Vbb > VOUT,
VIN(inv) = VIN(fwd) = 0V
5.4.16 Slew rate On
25% to 50% VOUT
(dV / dt)ON
-
0.2 0.35 V/µs RL = 2.2 Ω
5.4.17 Slew rate Off
50% to 25% VOUT
-(dV/dt)OFF
-
0.2 0.45 V/µs RL = 2.2 Ω
1) Please mind the limitations of the embedded protection functions. See Chapter 4.1 and Chapter 6 for details.
2) Not subject to production test, specified by design
3) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm
thick) for Vbb connection. PCB is vertical without blown air.
4) Not subject to production test, parameters are calculated from RDS(ON) and Rth
5) During inverse operation (IL < 0 A, VbIN > 0 V), a current through the intrinsic body diode causing a voltage drop of VON(inv)
results in a delayed switch on with a time delay td(inv) after the transition from inverse to forward operation. A sense current
IIS(fault) can be provided by the pin IS until standard forward operation is reached.
Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature.
Typical values show the typical parameters expected from manufacturing.
Datasheet
14
Rev. 1.0, 2008-01-23
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