TLE4964-1M Datasheet, PDF (13/26 Pages) Infineon Technologies AG – High Precision Automotive Hall Effect Switch

TLE4964-1M
Specification
3.2
Absolute Maximum Ratings
Table 3-1
Absolute Maximum Rating Parameters
Parameter
Symbol
Values
Unit Note / Test Condition
Supply voltage¹⁾
Min.
Typ.
Max.
V_DD
-18
32
V
42
10h, no external resistor required
Output voltage
V_Q
-0.5
Reverse output current I_Q
-70
Junction temperature¹⁾ T_J
-40
32
V
mA
155
°C for 2000h (not additive)
165
for 1000h (not additive)
175
for 168h (not additive)
195
for 3 x 1h (additive)
Storage temperature T_S
-40
Thermal resistance
Junction ambient
R_thJA
150
°C
300
K/W for PG-SOT23-3-15 (2s2p)
Thermal resistance
Junction lead
R_thJL
100
K/W for PG-SOT23-3-15
1) This lifetime statement is an anticipation based on an extrapolation of Infineon’s qualification test results. The actual lifetime
of a component depends on its form of application and type of use etc. and may deviate from such statement. The lifetime
statement shall in no event extend the agreed warranty period.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Calculation of the dissipated power P_DIS and junction temperature T_J of the chip (SOT23 example):
e.g for: V_DD = 12 V, I_S = 2.5 mA, V_QSAT = 0.5 V, I_Q = 20 mA
Power dissipation: P_DIS = 12 V x 2.5 mA + 0.5 V x 20 mA = 30 mW + 10 mW = 40 mW
Temperature ∆T = R_thJA x P_DIS = 300 K/W x 40 mW = 12 K
For T_A = 150 °C: T_J = T_A + ∆T = 150 °C + 12 K = 162 °C
Table 3-2
ESD Protection¹⁾ (TA = 25°C)
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
ESD voltage (HBM)²⁾
ESD voltage (SDM)³⁾
V_ESD
-7
-1
7
kV R = 1.5 kΩ, C = 100 pF
1
ESD voltage (system level)⁴⁾
-15
15
with circuit shown in
Figure 3-1 & Figure 3-2
1) Characterization of ESD is carried out on a sample basis, not subject to production test.
2) Human Body Model (HBM) tests according to EIA/JESD22-A114.
3) Socket device model (SDM) tests according to EOS/ESD-DS5.3-1993.
4) Gun test (2kΩ / 330pF or 330Ω / 150pF) according to ISO 10605-2008.
Data Sheet
13
Revision 1.0, 2012-07-20