|
SKB06N60HS Datasheet, PDF (13/14 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology | |||
|
◁ |
Figure A. Definition of switching times
SKB06N60HS
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr
S
F
t
rr
t
t
S
F
QQ
S
F
10% I
t
rrm
di /dt V
90% I r r
R
rrm
Figure C. Definition of diodes
switching characteristics
Ï1
r1
Tj (t)
p(t)
r1
Ï2
r2
r2
Ïn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Published by
Power Semiconductors
13
Figure E. Dynamic test circuit
Leakage inductance LÏ =60nH
an d Stray capacity CÏ =40pF.
Rev. 2.2 June 06
|
▷ |