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IGW50N65H5_15 Datasheet, PDF (13/14 Pages) Infineon Technologies AG – 650V IGBT high speed switching series fifth generation
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IGW50N65H5
Highspeedswitchingseriesfifthgeneration
Testing Conditions
VGE(t)
90% VGE
IC(t)
VCE(t)
90% IC
10% IC
10% VGE
t
90% IC
10% IC
t
I,V
dIF/dt
trr = ta + tb
Qrr = Qa + Qb
a
b
Qa Qb
dI
Figure C. Definition of diode switching
characteristics
t
td(off)
tf
td(on)
tr
t
Figure A.
VGE(t)
90% VGE
10% VGE
t
IC(t)
2% IC
t
VCE(t)
Eoff =
t1
t1
Figure B.
t2
VCE x IC x dt
t2
Eon =
t3
t3
t4
VCE x IC x dt
2% VCE
t4
t
13
Figure D.
CC
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
Rev.2.1,2015-05-05
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