IGCM10F60HA_16 Datasheet, PDF (13/16 Pages) Infineon Technologies AG – Control Integrated POwer System

Control Integrated POwer System (CIPOS™)
IGCM10F60HA
Electrical characteristic
20
T =25℃
18
J
16
14
12
10
8
VDD=13V
VDD=15V
6
VDD=20V
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE(sat), Collector - Emitter voltage [V]
Typ. Collector – Emitter saturation voltage
1.8
VDC=300V
1.6 VDD=15V
1.4
High side @T =25℃
1.2
J
High side @T =150℃
J
1.0
Low side @T =25℃
J
Low side @T =150℃
J
0.8
0.6
0.4
0.2
0.0
0 2 4 6 8 10 12 14 16 18 20
Ic, Collector current [A]
Typ. Turn on switching energy loss
1000
VDC=300V
VDD=15V
900
High side @T =25℃
J
High side @T =150℃
J
800
Low side @T =25℃
J
Low side @T =150℃
J
700
600
500
0 2 4 6 8 10 12 14 16 18 20
Ic, Collector current [A]
Typ. Turn on propagation delay time
700
VDC=300V
VDD=15V
600
500
High side @T =25℃
J
400
High side @T =150℃
J
Low side @T =25℃
J
300
Low side @T =150℃
J
200
100
0
0 2 4 6 8 10 12 14 16 18 20
Ic, Collector current [A]
Typ. Turn off switching time
20
VDD=15V
18
16
14
12
10
8
6
T =25℃
J
4
T =150℃
J
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VCE(sat), Collector - Emitter voltage [V]
Typ. Collector – Emitter saturation voltage
0.6
High side @T =25℃
J
0.5
High side @T =150℃
J
Low side @T =25℃
J
Low side @T =150℃
J
0.4
0.3
0.2
0.1
VDC=300V
VDD=15V
0.0
0 2 4 6 8 10 12 14 16 18 20
Ic, Collector current [A]
Typ. Turn off switching energy loss
400
VDC=300V
350 ^VDD=15V
300
High side @T =25℃
J
High side @T =150℃
J
250
Low side @T =25℃
J
Low side @T =150℃
J
200
150
100
50
0
0 2 4 6 8 10 12 14 16 18 20
Ic, Collector current [A]
Typ. Turn on switching time
400
VDC=300V
350 ^VDD=15V
300
250
200
High side @T =25℃
J
High side @T =150℃
J
Low side @T =25℃
J
Low side @T =150℃
J
150
100
50
0
0 2 4 6 8 10 12 14 16 18 20
Ic, Collector current [A]
Typ. Reverse recovery time
20
18
16
14
12
10
8
6
T =25℃
J
4
T =150℃
J
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V_F, Emitter - Collector voltage [V]
Typ. Emitter – Collector forward voltage
300
VDC=300V
270 VDD=15V
240
High side @T =25℃
J
High side @T =150℃
210
J
Low side @T =25℃
J
180
Low side @T =150℃
J
150
120
90
60
30
0
0 2 4 6 8 10 12 14 16 18 20
Ic, Collector current [A]
Typ. Reverse recovery energy loss
1700
1600
1500
VDC=300V
VDD=15V
1400
1300
1200
1100
High side @T =25℃
J
High side @T =150℃
J
Low side @T =25℃
J
Low side @T =150℃
J
1000
900
800
700
0 2 4 6 8 10 12 14 16 18 20
Ic, Collector current [A]
Typ. Turn off propagation delay time
10
1
0.1
0.01
1E-3
D : duty ratio
D=50%
D=20%
D=10%
D=5%
D=2%
Single pulse
1E-4
1E-7 1E-6 1E-5 1E-4 1E-3 0.01 0.1
1
10 100
t_P, Pulse width [sec.]
IGBT transient thermal resistance at all six
IGBTs operation
Datasheet
13
<Revision 2.8>
<2016-08-01>