TLE6286 Datasheet, PDF (12/19 Pages) Infineon Technologies AG – LIN-Transceiver LDO

Target Data TLE 6286
3.3 Electrical Characteristics (cont’d)
4.5 V < V_CC < 5.5 V; 6.0 V < V_S < 20 V; R_L = 1 kΩ; V_EN > V_EN,ON; -40 °C < T_j < 125 °C; all voltages with respect
to ground; positive current flowing into pin; unless otherwise specified.
Parameter
Symbol Limit Values Unit Remarks
min. typ. max.
LOW level input voltage
threshold
TxD pull up current
V_TD,L
I_TD
0.3 x 2.1
V
dominant state
V_CC
-150 -110 -80 µA ^VTxD ^{< 0.3 Vcc}
Bus transmitter
Bus recessive output voltage V_bus,rec 0.9 x
V_S
V_S V
V_TxD = V_CC
Bus dominant output voltage V_bus,dom 0
1.5 V
V_TxD = 0 V;
Bus short circuit current
I_bus,sc 40
85
125 mA ^Vbus,short ^{= 13.5 V}
Leakage current
I_bus,lk -350 -100
µA ^VCC ^{= 0 V, V}S ^{= 0 V,}
V_bus = -8 V, T_j < 85 °C
5
20
µA ^VCC ^{= 0 V, V}S ^{= 0 V,}
V_bus = 20 V, T_j < 85 °C
Bus pull up resistance
R_bus
20 30 47 kΩ
Enable input (pin ENLIN)
HIGH level input voltage
threshold
LOW level input voltage
threshold
EN input hysteresis
EN pull down resistance
V_EN,on
2.8
V_EN,off
V_EN,hys
R_EN
0.3 x 2.2
V_CC
300 600
15 30
0.7 x V
V_CC
V
mV
60 kΩ
normal mode
low power mode
Inhibit output (pin INHO)
HIGH level drop voltage
∆V_INH = V_S − V_INH
Leakage current
∆V_INH
0.5 1.0 V
I_INH = - 0.15 mA
I_INH,lk - 5.0
5.0 µA ^{sleep mode;}
V_INHO = 0 V
Version 1.02
12
2001-10-15