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| TLE4961-5M Datasheet, PDF (12/26 Pages) Infineon Technologies AG – High Precision Automotive Hall Effect Latch | |||
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3
Specification
TLE4961-5M
Specification
3.1
Application Circuit
The following Figure 3-1 shows the basic option of an application circuit. Only a pull-up resisotor RQ is necessary.
An external series resistor for Vs is not needed. The resistor RQ has to be in a dimension to match the applied VS
to keep IQ limited to the operating range of maximum 25 mA.
e.g.: VS = 12 V and RQ=1200 ⦠gives IQ= 12 V/1200 ⦠= 10 mA.
Vs
VDD
RQ = 1.2kΩ
Q
GND
Figure 3-1 Basic Application Circuit #1: Only Pull-Up Resistor is necessary
Vs
VDD
RQ = 1.2kΩ
CDD = 47nF
Q
TVS diode
e.g. ESD24VS2U
GND
Figure 3-2 Enhanced Application Circuit #2: for extended ESD robustness
With an additional capacitor CDD and a transient voltage suppression (TVS) diode an extended ESD robustness
of 15kV on system level is achieved (Figure 3-2). If an increased robustness for e.g. testpulse 1 is required a serial
resistor in the suppply needs to be added (see also Chapter 3.5).
Data Sheet
12
Revision 1.0, 2013-07-04
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