IPD60R800CE Datasheet, PDF (12/17 Pages) Infineon Technologies AG – Very high commutation ruggedness

600VCoolMOS™CEPowerTransistor
IPD60R800CE,IPA60R800CE
Diagram17:Drain-sourcebreakdownvoltage
700
Diagram18:Typ.capacitances
10⁴
680
660
10³
640
Ciss
620
10²
600
Coss
580
10¹
560
540
Crss
520
-75 -50 -25 0 25 50 75 100 125 150 175
Tj[°C]
10⁰
0
100
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=0.25mA
C=f(VDS);VGS=0V;f=1MHz
Diagram19:Typ.Cossstoredenergy
2.5
2.0
1.5
1.0
0.5
0.0
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
12
Rev.2.0,2014-09-25