IPD60R180C7_15 Datasheet, PDF (12/15 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
R_g1
V_DS
R_g 2
I_F
R_g1 = R_g 2
600VCoolMOS™C7PowerTransistor
IPD60R180C7
Diode recovery waveform
V,I
V_{DS( peak)}
VDS
I_F
dI_F / dt
Irrm
V_DS
trr
tF
tS
I_{F t}
QF QS
10 %I_rrm
dIrr / dt _{trr =tF +tS}
Q_rr = Q_F + Q_S
Table9Switchingtimes
Switching times test circuit for inductive load
V_GS
V_DS
V_DS
V_GS
Switching times waveform
90%
10%
t_d(on) t_r
ton
t_{d(off) tf}
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
I_D
V_DS
Unclamped inductive waveform
V_(BR)DS
V_DS
I_D
V_DS
Final Data Sheet
12
Rev.2.0,2015-08-10