BGA628L7 Datasheet, PDF (12/16 Pages) Infineon Technologies AG – Silicon Germanium Wide Band Low Noise Amplifier

2.2.7 Electrical Characteristics at f = 3.5 GHz
BGA628L7
Electrical Characteristics
Table 11 Electrical Characteristics at T_A = 25 °C (measured according to Figure 2), V_CC = 2.75 V,
unless otherwise specified
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Maximum available power gain
Insertion power gain
Insertion power gain (Off-State)
Input return loss
G_ma
–
|S₂₁|²
–
|S₂₁|²
–
RLin
–
16
–
13.5
–
-22
–
7
–
dB –
dB –
dB
V_out = 2.75 V
dB –
Output return loss
RL_out
–
8
–
dB –
Minimum noise figure
NF_min
–
0.9
–
dB
Z_S = Z_Sopt
Noise figure in 50 Ω System
NF_50Ω
–
1.0
–
dB
Z_S = Z_L =50 Ω
Input third order intercept point¹⁾
IIP3
–
5
–
dBm Δf = 1 MHz,
P_IN = -28 dBm
Input power at 1 dB gain compression P_-1dB
–
-14.5
–
dBm –
1) IP₃ values depends on termination of all intermodulation frequency components. Termination used for this measurement
is 50 Ω from 0.1 to 6 GHz
2.2.8 Electrical Characteristics at f = 5.5 GHz
Table 12 Electrical Characteristics at T_A = 25 °C (measured according to Figure 2), V_CC = 2.75 V,
unless otherwise specified
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Maximum available power gain
Insertion power gain
Insertion power gain (Off-State)
Input return loss
G_ma
–
|S₂₁|²
–
|S₂₁|²
–
RLin
–
10
–
8
–
-23
–
8
–
dB –
dB –
dB
V_out = 2.75 V
dB –
Output return loss
RL_out
–
6
–
dB –
Minimum noise figure
NF_min
–
1.1
–
dB
Z_S = Z_Sopt
Noise figure in 50 Ω System
NF_50Ω
–
1.3
–
dB
Z_S = Z_L =50 Ω
Input third order intercept point¹⁾
IIP3
–
9
–
dBm Δf = 1 MHz,
P_IN = -28 dBm
Input power at 1 dB gain compression P_-1dB
–
-11
–
dBm –
1) IP₃ values depends on termination of all intermodulation frequency components. Termination used for this measurement
is 50 Ω from 0.1 to 6 GHz
Preliminary Data Sheet
12
Revision 1.1, 2009-12-17