2ED020I12-FI Datasheet, PDF (12/22 Pages) Infineon Technologies AG – Dual IGBT Driver IC

Final Data
High and Low Side Driver
2ED020I12-FI
Electrical Parameters
Parameter
Junction temperature
Symbol
T_J
Limit Values
min.
max.
– 40
105
Junction temperature
T_J
– 40
125
1) _{With reference to high side ground GNDH.}
2) _{With respect to both GND and GNDL.}
Unit Remarks
°C Industrial
applications,
useful
lifetime
87600h
°C Other
applications,
useful
lifetime
15000h
5.3
Electrical Characteristics
Note: The electrical characteristics involve the spread of values guaranteed for the
supply voltages, load and junction temperature given below. Typical values
represent the median values, which are related to production processes. Unless
otherwise noted all voltages are given with respect to ground (GND).
VSL = VSH – GNDH = 15 V, C_L = 1 nF, T_A = 25 °C. Positive currents are assumed
to be flowing into pins.
Voltage Supply
Parameter
Symbol
Limit Values Unit Test Condition
min. typ max.
High side
leakage current
High side quiescent
supply current
I_GNDH
I_VSH
High side undervoltage V_VSH1)
lockout, upper threshold
High side undervoltage V_VSH1)
lockout, lower threshold
—0
— µA GNDH = 1.2kV
GNDL = 0 V
— 2.4 3.2 mA VSH = 15V¹⁾
— 2.3 3.2 mA VSH = 15V¹⁾
T_J = 125 °C
10.9 12.2 13.5 V
— 11.2
—V
High side undervoltage ∆V_VSH 0.7 1
lockout hysteresis
1.3 V
Final Datasheet
12
September 2007