ITS4200S-ME-P Datasheet, PDF (11/20 Pages) Infineon Technologies AG – Smart High-Side NMOS-Power Switch

ITS4200S-ME-P
Typical Performance Graphs
Typical Characterisitics
Standby Current I_SSTB versus
Junction Temperature T_j
Output Leakage current I_OUTLK versus
Junction Temperature T_j
22
4
20
3.5
18
16
3
14
2.5
12
2
10
8
1.5
6
4
2
V_IN=0V;V_s=32V
0
−40 −25
0
25
50
75 100 125
T_j [°C]
1
0.5
0
−40 −25
V_IN=0V;V_s=32V
0
25 50
T_j [°C]
75 100 125
Initial Peak Short Circuit Current Limt I_LSCP versus Initial Short Circuit Shutdown time t_SCOFF versus
Junction Temperature T_j
Junction Temperature T_j
4
3.5
3
2.5
2
1.5
1
0.5
V_s=20V; tm=150μs
0
−40 −25
0
25
50
75 100 125
T_j [°C]
25
V_s=20V
20
15
10
5
0
−40 −25
0
25
50
75 100 125
T_j[°C]
Data Sheet
11
Rev 1.0, 2012-09-01