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| IPL65R650C6S Datasheet, PDF (11/14 Pages) Infineon Technologies AG – Very high commutation ruggedness | |||
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6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
650VCoolMOSâ¢C6PowerTransistor
IPL65R650C6S
Diode recovery waveform
V,I
VDS( peak)
VDS
IF
dIF / dt
Irrm
VDS
trr
tF
tS
IF t
QF QS
10 %Irrm
dIrr / dt trr =tF +tS
Qrr = QF + QS
Table9Switchingtimes
Switching times test circuit for inductive load
VGS
VDS
VDS
VGS
Switching times waveform
90%
10%
td(on) tr
ton
td(off) tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
ID
VDS
Unclamped inductive waveform
V(BR)DS
VDS
ID
VDS
Final Data Sheet
11
Rev.2.0,2014-07-08
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