IPD65R660CFDA Datasheet, PDF (11/14 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

650VCoolMOS™CFDAPowerTransistor
IPD65R660CFDA
Drain-sourcebreakdownvoltage
760
740
720
700
680
660
640
620
600
580
560
540
-40
0
VBR(DSS)=f(Tj);ID=0.25mA
40
80
Tj[°C]
Typ.capacitances
10⁵
Ciss
Coss
10⁴ Crss
10³
10²
10¹
10⁰
120
160
0
100
200
300
400
500
600
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Typ.Cossstoredenergy
4
3
2
1
0
0
100
200
300
400
500
600
VDS[V]
Eoss=f(VDS)
Final Data Sheet
11
Rev.2.1,2014-11-19