IPA60R099P6 Datasheet, PDF (11/18 Pages) Infineon Technologies AG – Increased MOSFET dv/dt ruggedness

600VCoolMOS™P6PowerTransistor
IPW60R099P6,IPP60R099P6,IPA60R099P6
Diagram13:Typ.transfercharacteristics
120
25 °C
100
80
60
150 °C
40
20
0
0
2
4
6
8
VGS[V]
ID=f(VGS);VDS=20V;parameter:Tj
10
12
Diagram14:Typ.gatecharge
10
9
8
120 V
480 V
7
6
5
4
3
2
1
0
14
0 10 20 30 40 50 60 70 80
Qgate[nC]
VGS=f(Qgate);ID=18.1Apulsed;parameter:VDD
Diagram15:Forwardcharacteristicsofreversediode
10²
Diagram16:Avalancheenergy
800
700
600
10¹
500
125 °C
25 °C
400
300
10⁰
200
100
10^-1
0.0
0.5
1.0
1.5
VSD[V]
IF=f(VSD);parameter:Tj
0
2.0
25
50
75
100
125
150
Tj[°C]
EAS=f(Tj);ID=6.6A;VDD=50V
Final Data Sheet
11
Rev.2.1,2015-05-18