IKW30N60H3_14 Datasheet, PDF (11/16 Pages) Infineon Technologies AG – IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode

IKW30N60H3
Highspeedswitchingseriesthirdgeneration
16
120V
480V
14
12
10
1000
Cies
Coes
Cres
8
100
6
4
2
0
0 20 40 60 80 100 120 140 160 180
QGE,GATECHARGE[nC]
Figure 17. Typicalgatecharge
(IC=30A)
10
0
10
20
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
380
15
330
12
280
9
230
6
180
3
130
80
10
12
14
16
18
20
VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTj=25°C)
0
10
11
12
13
14
15
VGE,GATE-EMITTERVOLTAGE[V]
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTj≤150°C)
11
Rev.2.2,2014-03-12