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IGB10N60T Datasheet, PDF (11/12 Pages) Infineon Technologies AG – Low Loss IGBT in TrenchStop and Fieldstop technology | |||
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TrenchStop® Series
IGB10N60T
p
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr
S
F
t
rr
t
t
S
F
QQ
S
F
10% I
t
rrm
di /dt V
90% I r r
R
rrm
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
Ï1
r1
Tj (t)
p(t)
r1
Ï2
r2
r2
Ïn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
11
Figure E. Dynamic test circuit
Leakage inductance LÏ =60nH
a nd Stray capacity CÏ =40pF.
Rev. 1.2 12.08.2009
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