BSL215C_13 Datasheet, PDF (11/13 Pages) Infineon Technologies AG – OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor

25 Typ. gate charge (P)
V _GS=f(Q _gate); I _D=-1.5 A pulsed
parameter: V _DD
6
-16 V
-4 V
5
-10 V
4
26 Typ. gate charge (N)
V _GS=f(Q _gate); I _D=1.5 A pulsed
parameter: V _DD
6
BSL215C
5
10 V
4V
16 V
4
3
3
2
2
1
1
0
0
1
2
3
4
-Q_gate [nC]
27 Drain-source breakdown voltage (P)
V _BR(DSS)=f(T _j); I _D=-250 µA
0
5
0
0.2
0.4
0.6
0.8
1
Q_gate [nC]
28 Drain-source breakdown voltage (N)
V _BR(DSS)=f(T _j); I _D=250 µA
25
24
23
22
21
20
19
18
17
16
-60 -20
20
60 100 140 180
T_j [°C]
25
24
23
22
21
20
19
18
17
16
-60 -20 20
60 100 140 180
T_j [°C]
Rev.2.2
page 11
2013-11-06