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BSC0911ND Datasheet, PDF (11/14 Pages) Infineon Technologies AG – Dual N-Channel OptiMOS™ MOSFET
◁
25 Typ. gate charge (Q1)
V GS=f(Q gate); I D=20 A pulsed
parameter: V DD
10
26 Typ. gate charge (Q2)
V GS=f(Q gate); I D=20 A pulsed
parameter: V DD
10
BSC0911ND
8
12 V
5V
20 V
6
4
8
12 V
6
5V
20 V
4
2
2
0
0
4
8
12
16
Qgate [nC]
27 Drain-source breakdown voltage (Q1)
V BR(DSS)=f(T j); I D=1 mA
0
20
0
10
20
30
40
50
60
Qgate [nC]
28 Drain-source breakdown voltage (Q2)
V BR(DSS)=f(T j); I D=1 mA
28
27
26
25
24
23
22
21
20
-60 -20
20
60 100 140 180
Tj [°C]
28
27
26
25
24
23
22
21
20
-60 -20 20
60 100 140 180
Tj [°C]
Rev.2.0
page 11
2013-07-30
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