BGA7L1N6 Datasheet, PDF (11/22 Pages) Infineon Technologies AG – Silicon Germanium Low Noise Amplifier for LTE

BGA7L1N6
Electrical Characteristics
Table 5
Electrical Characteristics:¹⁾ T_A = 25 °C, V_CC = 2.8 V, V_PON,ON = 2.8 V, V_PON,OFF = 0 V,
f = 869 - 894 MHz
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
Supply voltage
Supply current
V_CC
1.5
–
3.3
V
–
I_CC
–
4.5
5.5
mA ON-mode
–
0.2
3
μA OFF-mode
Power On voltage
V_pon
1.0
–
0
–
Vcc
V
ON-mode
0.4
V
OFF-mode
Power On current
I_pon
–
10
–
–
Insertion power gain
Noise figure²⁾
|S₂₁|²
NF
11.8 13.3
–
0.9
Input return loss³⁾
RL_in
10
24
Output return loss³⁾
RL_out
10
15
Reverse isolation³⁾
1/|S₁₂|²
18
22
Power gain settling time⁴⁾⁵⁾
t_S
–
3
Inband input 1dB-compression IP_1dB
-7
-3
point³⁾
Inband input 3^rd-order intercept IIP₃
-5
0
point⁶⁾³⁾
Stability⁵⁾
k
–
>1
1) Based on the application described in chapter 3
2) PCB losses are subtracted
3) Verification based on AQL; not 100% tested in production
4) To be within 1 dB of the final gain
5) Guaranteed by device design; not tested in production
6) Input power = -30 dBm for each tone
15
1
14.8
1.5
–
–
–
6
–
–
–
μA
μA
dB
dB
dB
dB
dB
μs
dBm
ON-mode
OFF-mode
–
Z_S = 50 Ω
–
–
–
OFF- to ON-mode
–
dBm
f₁ = 880 MHz
f₂ = f₁ +/-1 MHz
f = 20 MHz ... 10 GHz
Data Sheet
11
Revision 3.1 (Min/Max), 2014-02-11