SKW20N60 Datasheet, PDF (10/14 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

40A
35A
30A
25A
150°C
20A
100°C
15A
25°C
10A
5A
-55°C
0A
0.0V
0.5V
1.0V
1.5V
2.0V
V_F, FORWARD VOLTAGE
Figure 25. Typical diode forward current as
a function of forward voltage
SKW20N60
2.0V
I _F = 40A
1.5V
I _F = 20A
1.0V
-40°C 0°C 40°C 80°C 120°C
T_j, JUNCTION TEMPERATURE
Figure 26. Typical diode forward voltage as
a function of junction temperature
10⁰K/W D=0.5
0.2
0.1
10^-1K/W 0.05
0.02
10^-2K/W ^0.01
R,(1/W)
0.358
0.367
0.329
0.216
0.024
τ, (s)=
9.02*10^-2
9.42*10^-3
9.93*10^-4
1.19*10^-4
1.92*10^-5
R1
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10^-3K/W
1µs 10µs 100µs 1ms 10ms 100ms 1s
t_p, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = t_p / T)
10
Mar-00