IPW65R125C7 Datasheet, PDF (10/15 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

650VCoolMOS™C7PowerTransistor
IPW65R125C7
Diagram9:Typ.transfercharacteristics
90
80
70
25 °C
Diagram10:Typ.gatecharge
12
10
120 V
400 V
60
8
50
6
40
150 °C
30
4
20
2
10
0
0
2
4
6
8
10
12
VGS[V]
0
0
10
20
30
40
50
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=8.9Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
10²
Diagram12:Avalancheenergy
90
80
70
10¹
125 °C
60
25 °C
50
40
10⁰
30
20
10
10^-1
0.0
0.5
1.0
VSD[V]
IF=f(VSD);parameter:Tj
0
1.5
25
50
75
100
125
150
Tj[°C]
EAS=f(Tj);ID=7.1A;VDD=50V
Final Data Sheet
10
Rev.2.0,2013-10-11